TY  - BOOK
AU  - Itoh,Kiyoo
AU  - Horiguchi,Masashi
AU  - Tanaka,Hitoshi
ED  - SpringerLink (Online service)
TI  - Ultra-Low Voltage Nano-Scale Memories
T2  - Series On Integrated Circuits And Systems,
SN  - 9780387688534
AV  - TK7888.4 
U1  - 621.3815 23
PY  - 2007///
CY  - Boston, MA
PB  - Springer US
KW  - Engineering
KW  - Computer hardware
KW  - Memory management (Computer science)
KW  - Electronics
KW  - Systems engineering
KW  - Nanotechnology
KW  - Circuits and Systems
KW  - Electronics and Microelectronics, Instrumentation
KW  - Memory Structures
KW  - Computer Hardware
KW  - Electronic and Computer Engineering
N1  - An Introduction to LSI Design -- Ultra-Low Voltage Nano-Scale DRAM Cells -- Ultra-Low Voltage Nano-Scale SRAM Cells -- Leakage Reduction for Logic Circuits in RAMs -- Variability Issue in the Nanometer Era -- Reference Voltage Generators -- Voltage Down-Converters -- Voltage Up-Converters and Negative Voltage Generators -- High-Voltage Tolerant Circuits
N2  - Ultra-Low Voltage Nano-Scale Memories provides an in-depth discussion of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically covered in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs. Moreover, various kinds of on-chip voltage converters necessary to solve problems with internal power-supply managements are extensively discussed. This authoritative monograph addresses these design challenges for memory and circuit engineers as well as for researchers and students who are interested in ultra-low voltage nano-scale memory LSIs
UR  - http://dx.doi.org/10.1007/978-0-387-68853-4
ER  -