Ishibashi, Koichiro. <br/><br/>
Low Power and Reliable SRAM Memory Cell and Array Design  [electronic resource] / 
edited by Koichiro Ishibashi, Kenichi Osada. 
 - XII, 144 p.  online resource. 
 - Springer Series in Advanced Microelectronics,  31  1437-0387 ; .
 - Springer Series in Advanced Microelectronics,  31 .
<br/><br/>Preface -- Introduction -- Fundamentals of SRAM Memory Cell -- Electrical Stability -- Sensitivity Analysis -- Memory Cell Design Technique for Low Power SOC -- Array Design Techniques -- Dummy Cell Design -- Reliable Memory Cell Design -- Future Technologies. 
<br/><br/> Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design. 
<br/><br/><label>ISBN: </label>9783642195686 
<br/><br/><label>Standard No.: </label>10.1007/978-3-642-19568-6  doi 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Engineering.<br/>Electronics.<br/>Engineering.<br/>Electronics and Microelectronics, Instrumentation.<br/>Engineering, general.
<br/><br/><label>LC Class. No.: </label>TK7800-8360 TK7874-7874.9 
<br/><br/><label>Dewey Class. No.: </label>621.381