TY  - BOOK
AU  - Ishibashi,Koichiro
AU  - Osada,Kenichi
ED  - SpringerLink (Online service)
TI  - Low Power and Reliable SRAM Memory Cell and Array Design
T2  - Springer Series in Advanced Microelectronics,
SN  - 9783642195686
AV  - TK7800-8360 
U1  - 621.381 23
PY  - 2011///
CY  - Berlin, Heidelberg
PB  - Springer Berlin Heidelberg
KW  - Engineering
KW  - Electronics
KW  - Electronics and Microelectronics, Instrumentation
KW  - Engineering, general
N1  - Preface -- Introduction -- Fundamentals of SRAM Memory Cell -- Electrical Stability -- Sensitivity Analysis -- Memory Cell Design Technique for Low Power SOC -- Array Design Techniques -- Dummy Cell Design -- Reliable Memory Cell Design -- Future Technologies
N2  - Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design
UR  - http://dx.doi.org/10.1007/978-3-642-19568-6
ER  -