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Low Power and Reliable SRAM Memory Cell and Array Design [electronic resource] / edited by Koichiro Ishibashi, Kenichi Osada.

By: Contributor(s): Material type: TextTextSeries: Springer Series in Advanced Microelectronics ; 31Publisher: Berlin, Heidelberg : Springer Berlin Heidelberg, 2011Description: XII, 144 p. online resourceContent type:
  • text
Media type:
  • computer
Carrier type:
  • online resource
ISBN:
  • 9783642195686
Subject(s): Additional physical formats: Printed edition:: No titleDDC classification:
  • 621.381 23
LOC classification:
  • TK7800-8360
  • TK7874-7874.9
Online resources:
Contents:
Preface -- Introduction -- Fundamentals of SRAM Memory Cell -- Electrical Stability -- Sensitivity Analysis -- Memory Cell Design Technique for Low Power SOC -- Array Design Techniques -- Dummy Cell Design -- Reliable Memory Cell Design -- Future Technologies.
In: Springer eBooksSummary: Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
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Preface -- Introduction -- Fundamentals of SRAM Memory Cell -- Electrical Stability -- Sensitivity Analysis -- Memory Cell Design Technique for Low Power SOC -- Array Design Techniques -- Dummy Cell Design -- Reliable Memory Cell Design -- Future Technologies.

Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

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